The term "transistor" originally referred to the point contact type, which saw very limited commercial application, being replaced by the much more practical bipolar junction types in the early 1950s. The characteristics of a transistor depend on its type. Applying current in BJTs and voltage in FETs between the input and common terminals increases the conductivity between the common and output terminals, thereby controlling current flow between them.
Modern transistors are divided into two main categories: bipolar junction transistors (BJTs) and field effect transistors (FETs). Transistors are the basic devices providing control of this kind. To control the flow of a much larger current. In this article, we highlighted the major differences between IGBT and MOSFET and how they operate.An electrical signal can be amplified by using a device that allows a small current or voltage These two types of transistors are widely used in modern electronic and power electronic circuits. MOSFETs are used in low power DC applications like in power supplies.īoth IGBT and MOSFET are types of transistors. IGBTs are extensively used in high power AC applications such as in inverter circuits. Thus, the operation of a MOSFET gets disturbed when the transient occurs. MOSFET cannot handle transient voltage and current. IGBT has ability to handle any transient voltage and current. Transient voltage & current handling ability The switching speed of MOSFET is very high. The switching speed of IGBT is relatively low. The turn-off time of a MOSFET is smaller than IGBT. MOSFET produces higher forward voltage drop than IGBT.įor IGBT, the turn-off time is larger than MOSFET. When IGBT is conducting current, it produces comparatively low forward voltage drop. MOSFET can be used for very high frequency (of the order of MHz) applications. IGBT can only be used for relatively low frequencies, up to a few kHz. MOSFET is capable of handling only low to medium voltage and power. IGBT has ability to handle very high voltage and high power. MOSFET is suitable for low to medium current conduction and controlling. IGBT is suitable for medium to high current conduction and controlling. MOSFET does not have any PN junction in its construction. IGBT has PN junctions in its construction. Sometimes, the body terminal is merged with the source, making it a three terminal device. MOSFET has four terminals which are: source (S), gate (G), drain (D) and body (or substrate). IGBT has three terminals, which are: emitter (E), gate (G) and collector (C). MOSFET is a four terminal semiconductor switching device which is also used as switching and amplification. IGBT is a three terminal semiconductor switching device used in the electronic circuits for switching and amplification of signals. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor IGBT stands for Insulated Gate Bipolar Transistor. The following table compares and contrasts the various features of IGBT and MOSFET − Parameter Sometimes, the body terminal of the MOSFET is connected to the source terminal, which makes it a three-terminal deviceīased upon the construction and principle of operation, the MOSFETs are of following four types − The four terminals of the MOSFET are: source (S), drain (D), gate (G) and body (or substrate). A MOSFET is a four terminal semiconductor switching device which is used for switching and amplifying the signals in the electronic circuits. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. Non Punch through IGBT (also called symmetrical IGBT).Punch through IGBT (also called asymmetrical IGBT).The insulated gate bipolar transistors (IGBTs) are classified into following two types − The IGBT has the combined features of BJT (Bipolar Junction Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The control signal is applied to the gate terminal of the IGBT. The three terminals of the IGBT are: emitter (E), collector (C) and gate (G). IGBT is a three terminal semiconductor device which is used in various electronic circuits for switching and amplification of signals. Go through this article to get a basic overview of how these two transistors operate and how they are different from each other. However, they are different in various aspects. Both IGBT and MOSFET are voltage-controlled devices. Insulated Gate Bipolar Transistor (IGBT) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are two types of transistors that are the basic building blocks of modern electronic circuits.
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